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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3214
DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For switching regulator and DC/DC converter applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg
Collector-base voltage

PARAMETER
Collector-emitter voltage
INC
Emitter-base voltage
Collector current
E SEM ANG H
Open base TC=25ae
Open emitter
OND IC
CONDITIONS
TOR UC
VALUE 1200 800 7 5 8 3 80 200 -65~200
UNIT V V V A A A W ae ae
Open collector
Collector current-peak
Base current Collector power dissipation Junction temperature Storage temperature
THERMAL CHARACTERISTICS
SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.0 UNIT ae /W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN
2SC3214
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ; IB=0
800
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
1200
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=2.5A; IB=0.5A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2.5A; IB=0.5A
1.5
V
ICBO
Collector cut-off current
VCB=960V; IE=0
10
|I
A
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain

IC=1.5A ; VCE=5V
CHA IN
E SEM NG
OND IC
10
TOR UC
10
|I
A
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3214

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions
3


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